HFT1N60F - N-Channel MOSFET

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SemiHow

Part number	HFT1N60F
Manufacturer	SemiHow
File Size	201.10 KB
Description	N-Channel MOSFET
Datasheet	HFT1N60F Datasheet
Additional preview pages of the HFT1N60F datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.7 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested SOT-223 2 3 1 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol VDSS ID IDM VGS EAS IAR EAR PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Curre.

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Published: Mar 26, 2016 |