HFU630A Datasheet 200V N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFD630A_HFU630A August 2015 HFD630A / HFU630A 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 9.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 12 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630A 1 2 3 HFU630A 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-So.