HFW12N60S - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFW12N60S
Manufacturer	SemiHow
File Size	207.35 KB
Description	N-Channel MOSFET
Datasheet	HFW12N60S Datasheet
Additional preview pages of the HFW12N60S datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.53 ȍ7S#9GS=10V 100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain.

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Published: Mar 26, 2016 |