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HFW12N60S Datasheet Preview

HFW12N60S Datasheet

N-Channel MOSFET

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Jan 2013
HFW12N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ = 0.53 ȍ
ID = 12 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 38 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.53 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
D2-PAK
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
12
7.4
48
ρ30
870
12
22.5
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25) *
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
3.13
225
1.78
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.56
40
62.5
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͤ͑͢͡




SemiHow

HFW12N60S Datasheet Preview

HFW12N60S Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 Ꮃ͑
VGS = 10 V, ID = 6.0 A
2.0
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 , Referenced to 25
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 12 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 480V, ID = 12 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 12.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 12.0 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.0
0.53 0.65
V
Ÿ
-- -- V
0.5 -- V/
-- 1
-- 10
-- 100
-- -100
1835
185
16
2385
240
21
30 70
85 180
140 280
90 190
38 49
8 --
13 --
nC
nC
nC
-- 12
-- 48
-- 1.4
420 --
4.9 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=11mH, IAS=12A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$, di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͤ͑͢͡


Part Number HFW12N60S
Description N-Channel MOSFET
Maker SemiHow
Total Page 7 Pages
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