HFW12N60S Datasheet N-channel MOSFET

Manufacturer: SemiHow

Overview: HFW12N60S Jan 2013 HFW12N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.

Datasheet Details

Part number	HFW12N60S
Manufacturer	SemiHow
File Size	207.35 KB
Description	N-Channel MOSFET
Datasheet	HFW12N60S-SemiHow.pdf

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.53 ȍ7S#9GS=10V 100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain.

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