HFW8N65U - N-Channel MOSFET

Product Overview

SemiHow

Part number	HFW8N65U
Manufacturer	SemiHow
File Size	297.18 KB
Description	N-Channel MOSFET
Datasheet	HFW8N65U Datasheet
Additional preview pages of the HFW8N65U datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested Jan 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 7.5 A D2-PAK I2-PAK HFW8N65U HFI8N65U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter V.

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Published: Mar 26, 2016 |