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HRF130N06K - 60V N-Channel Trench MOSFET

Key Features

  • ‰ BVDSS = 60 V ‰ ID = 48 A ‰ Unrivalled Gate Charge : 42 nC (Typ. ) ‰ Lower RDS(ON) : 10.5 Pȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Tested Jan 2016 8DFN 5x6 1 Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TC= 25୅ TA = 25୅ Operating and Storage Temperature Range.

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Datasheet Details

Part number HRF130N06K
Manufacturer SemiHow
File Size 171.84 KB
Description 60V N-Channel Trench MOSFET
Datasheet download datasheet HRF130N06K Datasheet

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HRF130N06K HRF130N06K 60V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 60 V ‰ ID = 48 A ‰ Unrivalled Gate Charge : 42 nC (Typ.) ‰ Lower RDS(ON) : 10.5 Pȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested Jan 2016 8DFN 5x6 1 Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TC= 25୅ TA = 25୅ Operating and Storage Temperature Range 60 ρ25 48 30 110 123 60 2.0 -55 to +150 Units V V A A A mJ W W ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient (steady state) Typ. --- Max. 2.