Electrical Characteristics TJ=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 ㎂
VGS = 10 V, ID = 10 A
2.2
--
gFS Forward Transconductance
Off Characteristics
VDS = 20, ID = 10 A
--
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250 ㎂
VDS = 48 V, VGS = 0 V
VDS = 48 V, TJ = 125℃
VGS = ±20 V, VDS = 0 V
60
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 30 V, ID = 10 A,
RG = 6 Ω
VDS = 48 V, ID = 10 A,
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 10 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 10 A, VGS = 0 V
diF/dt = 100 A/μs
--
--
--
--
--
-- 3.8
10.5 13
60 --
V
mΩ
S
-- -- V
-- 1 ㎂
-- 100 ㎂
-- ±100 ㎁
2000
220
160
1.2
--
--
--
--
㎊
㎊
㎊
Ω
30 -- ㎱
50 -- ㎱
90 -- ㎱
30 -- ㎱
42 -- nC
8 -- nC
14 -- nC
-- 70
A
-- 245
-- 1.3 V
40 -- ㎱
40 -- nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=13A, VDD=25V, RG=25Ω, Starting TJ =25°C
◎ SEMIHOW REV.A0,December 2014
