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HRLU370N10K Datasheet N-channel MOSFET

Manufacturer: SemiHow

Overview: HRLD370N10K_HRLU370N10K HRLD370N10K / HRLU370N10K 100V N-Channel Trench.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 53 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 30 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 33 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A D-PAK I-PAK 2 1 1 32 3 HRLD370N10K HRLU370N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDS.

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