HRW82N10K - N-Channel MOSFET
HRW82N10K Features
* Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 110nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.5 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested August 2014 BVDSS = 100 V RDS(on) typ = Pȍ ID = 100 A D2-P
