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KSH13007 Datasheet

Switch Mode Series NPN Silicon Power Transistor

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KSH13007
◎ SEMIHOW REV.A0,May 2003




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KSH13007 Datasheet Preview

KSH13007 Datasheet

Switch Mode Series NPN Silicon Power Transistor

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KSH13007
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
Absolute Maximum Ratings TC=25unless otherwise noted
CHARACTERISTICS
SYMBOL
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
700
400
9
8
16
4
80
150
-65~150
UNIT
V
V
V
A
A
A
W
8 Amperes
NPN Silicon Power Transistor
80 Watts
TO-220
1. Base
2. Collector
3. Emitter
12 3
Electrical Characteristics TC=25unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn on Time
Storage Time
Fall Time
* Pulse Test: Pulse Width300μs, Duty Cycle2%
VCEO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Cob
fT
ton
tstg
tF
IC=10mA, IB=0
VEB=9V,IC=0
VCE=5V,IC=2A
VCE=5V,IC=5A
IC=2A,IB=0.4A
IC=5A,IB=1A
IC=8A,IB=2A
IC=2A,IB=0.4A
IC=5A,IB=1A
VCB=10V, f=0.1MHz
VCE=10V,IC=0.5A
Vcc=125V, Ic=5A
IB1=1A, IB2= -1A
RL=50Ω
Min Typ. Max Unit
400 V
1 mA
8 60
5 30
1V
2V
3V
1.2 V
1.6 V
110 pF
4 MHz
1.6 μS
3.0 μS
0.7 μS
Note : hFE1 Classification
R : 15 ~ 28, O : 26 ~ 39, Y : 37 ~ 50
◎ SEMIHOW REV.A0,May 2003


Part Number KSH13007
Description Switch Mode Series NPN Silicon Power Transistor
Maker SemiHow
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