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MCR100-6 Datasheet Preview

MCR100-6 Datasheet

Silicon Controlled Rectifier

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MCR100-6
Silicon Controlled Rectifier
FEATURES
Repetitive Peak Off-State Voltage: 400V
R.M.S On–State Current (IT(RMS) = 0.8A)
Low Gate Trigger Current: 200uA
Applications
Leakage detector, Electronic Ballast or protection circuit.
General Description
Semihow’s SCR product is a single directional PNPN device, has a
low gate trigger current and high stability in gate trigger current to
temperature, generally suitable for sensing and detection circuits.
VDRM = 400 V
IT(RMS) = 0.8 A
ITSM = 11 A
IGT = 200uA
Symbol
TO-92
K
G
A
Absolute Maximum Ratings (TJ=25unless otherwise specified )
Symbol
Parameter
Conditions
VDRM
VRRM
IT(AV)
IT(RMS)
Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Average On-State Current
R.M.S. On-State Current
ITSM Surge On-State Current
I2t Fusing Current
PGM
Forward Peak Gate Power
Dissipation
Sine wave, 50/60Hz, Gate open
Full sine wave, TC = 95.1oC
½ cycle, 50Hz/60Hz, Sine wave,
Non repetitive
t = 10ms
TJ = 125 °C, pulse width ≤ 1.0us
PG(AV)
Forward Average Gate Power
Dissipation
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TJ = 125 °C, t = 8.3ms
TJ = 125 °C, pulse width ≤ 1.0us
TJ = 125 °C, pulse width ≤ 1.0us
Ratings
400
400
0.5
0.8
10/11
0.5
2
Unit
V
V
A
A
A
A2S
W
0.1 W
1
5
-40~+125
-40~+150
A
V
oC
oC
SEMIHOW REV.A0,March 2012




SemiHow

MCR100-6 Datasheet Preview

MCR100-6 Datasheet

Silicon Controlled Rectifier

No Preview Available !

Electrical Characteristics (TC=25unless otherwise specified )
Symbol
Parameter
Conditions
Min Typ Max Unit
IDRM Repetitive Peak Off-State Current VD = VDRM
TC=25oC
TC=125oC
-
-
- 50 uA
- 5 mA
IRRM Repetitive Peak Reverse Current VD = VDRM
TC=25oC
TC=125oC
-
-
- 50 uA
- 5 mA
IGT Gate Trigger Current
VD = 12V, RL=330
- - 200 uA
VGT Gate Trigger Voltage
VD = 12V, RL=330
- - 1.0 V
VGD Non-Trigger Gate Voltage1
VD = 12V, RL=330, TJ=125oC
0.2
-
-V
VTM Peak On-State Voltage
IT = 1.1A, IG = 5mA
- 1.2 1.7 V
dv/dt
Critical Rate of Rise of Off-State
Voltage
VD = 2/3 VDRM, TJ=125oC
10 -
- V/us
IH Holding current
IT= 0.2A
- - 1 mA
Notes :
1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1%
Thermal Characteristics
Symbol
Parameter
RθJC
RθJA
Thermal Resistance
Thermal Resistance
Conditions
Junction to Case
Junction to Ambient
Min Typ Max Unit
56 oC/W
150 oC/W
SEMIHOW REV.A0,March 2012


Part Number MCR100-6
Description Silicon Controlled Rectifier
Maker SemiHow
PDF Download

MCR100-6 Datasheet PDF






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