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SBP13007-H1 Datasheet High Voltage Fast-Switching NPN Power Transistor

Manufacturer: SemiWell Semiconductor

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Datasheet Details

Part number SBP13007-H1
Manufacturer SemiWell Semiconductor
File Size 665.12 KB
Description High Voltage Fast-Switching NPN Power Transistor
Datasheet download datasheet SBP13007-H1 Datasheet

General Description

TO-220 This device is designed for high voltage, high speed switching characteristic,especially suitable for ballast system.

1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP ＜ 5 ms ) Base Current Base Peak Current ( tP ＜ 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max.

Operating Junction Temperature Value 700 400 9.0 8.0 16 4.0 8.0 80 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJC RθJA www.DataSheet4U.com Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value 1.56 62.5 Units °C/W °C/W Aug, 2003.

Overview

SemiWell Semiconductor SBP13007- H1 High Voltage Fast-Switching NPN Power.

Key Features

  • - Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Short storge time - Wide Reverse Bias S. O. A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General.

More Datasheets from SemiWell Semiconductor

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SBP13007-H2 High Voltage Fast-Switching NPN Power Transistor