• Part: SBP13007-H1
  • Description: High Voltage Fast-Switching NPN Power Transistor
  • Category: Transistor
  • Manufacturer: SemiWell Semiconductor
  • Size: 665.12 KB
SBP13007-H1 Datasheet (PDF) Download
SemiWell Semiconductor
SBP13007-H1

Description

TO-220 This device is designed for high voltage, high speed switching characteristic,especially suitable for ballast system. 1 2 3 Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP < 5 ms ) Base Current Base Peak Current ( tP < 5 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max.

Key Features

  • Very High Switching Speed (Typical 60ns@5.0A)
  • Minimum Lot-to-Lot hFE Variation
  • Short storge time
  • Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter