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SBP13007D Datasheet High Voltage Fast-switching NPN Power Transistor

Manufacturer: WINSEMI SEMICONDUCTOR

Overview: SBP13007D High Voltage Fast-Switching NPN Power Transistor.

Datasheet Details

Part number SBP13007D
Manufacturer WINSEMI SEMICONDUCTOR
File Size 309.34 KB
Description High Voltage Fast-Switching NPN Power Transistor
Datasheet SBP13007D_WINSEMISEMICONDUCTOR.pdf

General Description

This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.

Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at TC = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 8.0 16 4.0 8.0 80 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Thermal Characteristics Symbol RθJC RθJA ..

Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.67 62.5 Units ℃/W ℃/W Oct 2008.

Key Features

  • Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in free wheeling diode General.

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