*
* RDS(on) (Max 0.18 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 45nC)
* Improved dv/dt Capability, High Ruggedness
* 100% Avalanche Tested.

This Power MOSFET is produced using Semiwell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited f.

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