• Part: SFP70N06
  • Manufacturer: SemiWell Semiconductor
  • Size: 1.06 MB
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SFP70N06 Key Features

  • Low RDS(on) (0.014Ω )@VGS=10V
  • Low Crss (Typical 160pF)
  • Improved dv/dt Capability
  • 100% Avalanche Tested
  • Maximum Junction Temperature Range (175°C)
  • 1. Gate

Other SFP70N06 Datasheets

Manufacturer Part Number Description
WINSEMI Logo WINSEMI SFP70N06 Silicon N-Channel MOSFET

View all SFP70N06 datasheets →

SFP70N06 Description

This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.