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SFP830 - N-Channel MOSFET

General Description

This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

  • SFP830 N-Channel MOSFET Symbol ◀ {.
  • manufactured High ruggedness RDS(on) (Max 1.5 Ω )@VGS=10V { 2. Drain.
  • Gate Charge (Typical 28nC) Improved dv/dt Capability www. DataSheet4U. com.
  • 100% Avalanche Tested.
  • Maximum Junction Temperature Range (150°C) 1. Gate ▲ { 3. Source General.

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Datasheet Details

Part number SFP830
Manufacturer SemiWell Semiconductor
File Size 0.96 MB
Description N-Channel MOSFET
Datasheet download datasheet SFP830 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SemiWell Semiconductor SanRex Features ■ ■ ■ ■ SFP830 N-Channel MOSFET Symbol ◀ { ● ● manufactured High ruggedness RDS(on) (Max 1.5 Ω )@VGS=10V { 2. Drain ● Gate Charge (Typical 28nC) Improved dv/dt Capability www.DataSheet4U.com ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) 1. Gate ▲ { 3. Source General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.