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SemiWell Semiconductor

SIM100D12SV1 Datasheet Preview

SIM100D12SV1 Datasheet

HALF-BRIDGE IGBT

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Preliminary
“HALF-BRIDGE” IGBT
Features
Applications
rench gate + field stopper, using
Infineon chip design
AC & DC Motor controls
10µs Short circuit capability
VVVF inverters
Low turn-off losses
Optimized for high frequency inverter
Short tail current for over 18KHz
Type Welding machines
Positive VCE(on)
High frequency SMPS
temperature coefficient
UPS, Robotics
SIM100D12SV1
VCES = 1200V
Ic = 100A
VCE(ON) typ. = 1.7V
@ Ic = 100A
Absolute Maximum Ratings @ Tc = 25 (per leg)
Package : V1
Symbol
Parameter
Condition
VCES
Collector-to-Emitter Voltage
VGES
Gate emitter voltage
IC Continuous Collector Current
ICM Pulsed collector current
IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
TSC Short Circuit Withstand Time
Viso Isolation Voltage test
Tj Junction Temperature
Tstg Storage Temperature
Weight Weight of Module
Mounting Power Terminal Screw : M5
Torque Terminal connection Screw : M5
VGE = 0V, IC = 500µA
TC = 80
TC = 25
TC = 80
TC=
AC 1 minute
Ratings
1200
± 20
100(140)
200
100(140)
200
10
2500
-40 ~ 150
-40 ~ 125
190
3.5
3.5
Unit
V
V
A
A
A
A
µs
V
g
Nm
Nm




SemiWell Semiconductor

SIM100D12SV1 Datasheet Preview

SIM100D12SV1 Datasheet

HALF-BRIDGE IGBT

No Preview Available !

Preliminary
SIM100D12SV1
Electrical Characteristics @ Tj = 25 (unless otherwise specified)
Symbol
Parameters
Min Typ Max Unit
Test conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage - 1350 1374
VGE = 0V, IC = 200µA
VCE(ON)
Collector-to-Emitter Saturation Voltage
1.4
1.7
2.1
V IC = 100A, VGE = 15V
VGE(th)
Gate Threshold Voltage
4.0 5.8 6.5
VCE = VGE, IC = 250µA
ICES Zero Gate Voltage Collector Current
- - 500 µA VGE = 0V, VCE = 1200V
IGES Gate-to-Emitter Leakage Current
-
-
± 100
nA VCE = 0V, VGE = ± 20V
VFM Diode Forward Voltage Drop
1.4 1.7 2.1
V IC = 100A
Switching Characteristic @ Tj = 25
Symbol
Parameters
Cies Input capacitance
Coss Output capacitance
Cres Reverse transfer capacitance
td(on)
Turn-on delay time
tr Rise time
td(off)
Turn-off delay time
tf Fall time
(unless otherwise specified)
Min Typ Max Unit
- 8653 -
- 452 -
pF
- 395 -
- 342 -
- 45 -
- 624 -
ns
- 108 -
Irr Diode Peak Reverse Recovery current - 155 -
A
trr Diode Reverse Recovery time
- 100 -
ns
Test conditions
VCC = 25V, VGE = 0V
f = 1.0MHz
Tj = 125 , VCC = 600V
IC = 100A, VGE = 15V
RG = 3.9
Tj = 125 , VCC = 600V
IF = 100A,
RG = 3.9, di/dt=1200A/us
Thermal Characteristic Values
Symbol
Parameters
R Junction-to-Case (IGBT Part, Per 1/2 Module)
R Junction-to-Case (Diode Part, Per 1/2 Module)
R Case-to-Heat Sink (Conductive grease applied)
Min
Typ
Max
Unit
- - 0.20
- - 0.41
- 0.05 -


Part Number SIM100D12SV1
Description HALF-BRIDGE IGBT
Maker SemiWell Semiconductor
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