900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SemiWell Semiconductor

SIM400D06AV3 Datasheet Preview

SIM400D06AV3 Datasheet

HALF-BRIDGE IGBT

No Preview Available !

Preliminary
SIM400D06AV3
“HALF-BRIDGE” IGBT MODULE
Feature
design technology
Low VCE (sat)
Low Turn-off losses
Short tail current for over 20KHz
Applications
Motor controls
VVVF inverters
Inverter-type welding MC over 18KHZ
SMPS, Electrolysis
UPS/EPS, Robotics
Package : V3
Absolute Maximum Ratings @ Tj=25 (Per Leg)
Symbol
VCES
VGE
IC
ICP
IF
IFM
tp
Viso
Weight
Tj
Tstg
Md
Parameter
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short circuit test, VGE = 15V, VCC = 360V
Isolation Voltage test
Weight of Module
Junction Temperature
Storage Temperature
Mounting torque with screw : M6
Condition
TC =
TC = 80
TC = 25
TC = 80
TC =
TC = 150 25
AC @ 1 minute
VCES = 600V
Ic=400A
VCE(ON) typ. = 1.6V
@Ic=400A
Ratings
600
20
400 (500)
800
400 (500)
800
6 (8)
2500
360
-40 ~ 150
-40 ~ 125
4.0
Unit
V
V
A
A
A
A
V
g
N.m
Static Characteristics @ Tj = 25 (unless otherwise specified)
Parameters
VCE(ON)
VGE(th)
ICES
IGES
VF
RGINT
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Integrated gate resistor
Min
Typ
1.60
5.8
1.6
1
Max Unit
Test conditions
1.95
6.5
5.0
400
2.0
IC = 400A, VGE = 15V
V
VCE = VGE, Ic = 8
VGE = 0V, VCE = 600V
VCE = 0V, VGE = V
V IF = 400A, VGE = 0V




SemiWell Semiconductor

SIM400D06AV3 Datasheet Preview

SIM400D06AV3 Datasheet

HALF-BRIDGE IGBT

No Preview Available !

Preliminary
SIM400D06AV3
Electrical Characteristic Values (IGBT / DIODE) @ Tj = 25 (unless otherwise specified)
Parameters
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VBR
IRM
trr
Qrr
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Cathode-Anode breakdown Voltage
Maximum Reverse Leakage Current
Reverse Recovery Time
Reverse Recovery Charge
Min Typ Max Unit
Test conditions
24670
1540
732
145
60
320
80
600
350
125
20.3
VCE = 25V, VGE = V
pF
f = 1 MHz
Inductive Switching (125
VCC = 300V
ns
IC = 400A, VGE = 15V
RG = 2.2
V
VR = 600V
ns IF = 400A, VR = 300V
µC di / dt = 4000A /
Thermal Characteristics
Symbol
RΘJC
RΘJC
RΘCS
Parameter
Junction-to-Case (IGBT Part, Per 1/2 Module)
Junction-to-Case (Diode Part, Per 1/2 Module)
Case-to-Heat Sink (Conductive grease applied)
Min
Typ
Max
Unit
- - 0.12
- - 0.22 /W
- 0.03 -


Part Number SIM400D06AV3
Description HALF-BRIDGE IGBT
Maker SemiWell Semiconductor
PDF Download

SIM400D06AV3 Datasheet PDF





Similar Datasheet

1 SIM400D06AV3 HALF-BRIDGE IGBT
SemiWell Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy