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SQ3960 - Chip Type 2C3960 Geometry 0003 Polarity NPN

Features

  • 2N3960, 2N3960UB, SD3960F, SQ3960, SQ3960F Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kÅ min. Au - 6.5 kÅ nom. 2.7 mils x 2.7 mils 2.7 mils x 2.7 mils 8 mils nominal 16 mils x 16 mils Silox Passivated Electrical Characteristics Parameter TA = 25oC Test conditions Min Max Unit BVCEO IC = 10.0 mA 12 --V dc BVCBO IC = 10 µA 20 --V dc BVEBO IE = 10.0 mA 4.5 --V dc ICEX VCE = 10 V, VEB = 2.0 V --5.0 nA hFE1 IC = 1.

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Datasheet Details

Part number SQ3960
Manufacturer Semicoa Semiconductor
File Size 29.98 KB
Description Chip Type 2C3960 Geometry 0003 Polarity NPN
Datasheet download datasheet SQ3960 Datasheet

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Data Sheet No. 2C3960 Chip Type 2C3960 Geometry 0003 Polarity NPN Generic Packaged Part: 2N3960 Chip type 2C3960 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high-speed current-mode logic switching. Features: 2N3960, 2N3960UB, SD3960F, SQ3960, SQ3960F Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kÅ min. Au - 6.5 kÅ nom. 2.7 mils x 2.7 mils 2.7 mils x 2.7 mils 8 mils nominal 16 mils x 16 mils Silox Passivated Electrical Characteristics Parameter TA = 25oC Test conditions Min Max Unit BVCEO IC = 10.0 mA 12 --V dc BVCBO IC = 10 µA 20 --V dc BVEBO IE = 10.0 mA 4.5 --V dc ICEX VCE = 10 V, VEB = 2.0 V --5.0 nA hFE1 IC = 1.
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