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Semikron Electronic Components Datasheet

SEMiX205TMLI12E4B Datasheet

IGBT

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SEMiX205TMLI12E4B
SEMiX® 5
3-Level TNPC IGBT-Module
SEMiX205TMLI12E4B
Features
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
Remarks*
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tjop=150°C
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
• For storage and case temperature with
TIM see document “TP(HALA P8)
SEMiX 5p”
Absolute Maximum Ratings
Symbol Conditions
IGBT1
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
IGBT2
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Diode1
VRRM
IF
IFnom
IFRM
IFSM
Tj
Diode2
VRRM
IF
IFnom
IFRM
IFSM
Tj
Module
It(RMS)
Tstg
Visol
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICRM = 3 x ICnom
VCC = 800 V, VGE 15 V, Tj = 150 °C,
VCES 1200 V
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICRM = 3 x ICnom
VCC = 360 V, VGE 15 V, Tj = 150 °C,
VCES 650 V
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 25 °C
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 25 °C
module without TIM
AC sinus 50Hz, t = 1 min
Values
1200
318
245
200
600
-20 ... 20
10
-40 ... 175
650
237
178
200
600
-20 ... 20
10
-40 ... 175
1200
229
172
200
400
990
-40 ... 175
650
235
171
200
400
1476
-40 ... 175
300
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
V
A
A
A
A
A
°C
A
°C
V
TMLI
© by SEMIKRON
Rev. 4.0 – 24.04.2017
1


Semikron Electronic Components Datasheet

SEMiX205TMLI12E4B Datasheet

IGBT

No Preview Available !

SEMiX205TMLI12E4B
SEMiX® 5
3-Level TNPC IGBT-Module
SEMiX205TMLI12E4B
Features
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
Remarks*
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tjop=150°C
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
• For storage and case temperature with
TIM see document “TP(HALA P8)
SEMiX 5p”
TMLI
2
Characteristics
Symbol Conditions
IGBT1
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 7.6 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 15 V...+ 15 V
Tj = 25 °C
VCC = 300 V
Tj = 150 °C
IC = 200 A
VGE = +15/-15 V
RG on = 3 Ω
RG off = 3 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 2437 A/µs Tj = 150 °C
di/dtoff = 3000 A/µs
Tj = 150 °C
Rth(j-c)
Rth(c-s)
Rth(c-s)
IGBT2
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
IC = 200 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 8 mA
VGE = 0 V, VCE = 650 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 15 V...+ 15 V
Tj = 25 °C
VCC = 300 V
IC = 200 A
VGE = +15/-15 V
RG on = 3 Ω
RG off = 3 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 3100 A/µs Tj = 150 °C
di/dtoff = 2800 A/µs
Tj = 150 °C
Rth(j-c)
Rth(c-s)
Rth(c-s)
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
Rev. 4.0 – 24.04.2017
min.
5
5.1
typ.
max. Unit
1.80
2.20
0.80
0.70
5.0
7.5
5.8
12.3
0.81
0.69
1513
3.8
232
128
3
422
121
14
0.06
0.046
2.05
V
2.40
V
0.90
V
0.80
V
5.8
mΩ
8.0
mΩ
6.5
V
2.7
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.136 K/W
K/W
K/W
1.55
1.75
0.90
0.82
3.3
4.7
5.8
12.3
0.77
0.37
2212
1.0
170
118
1.5
380
127
11.5
0.072
0.067
1.95
V
2.15
V
1.00
V
0.90
V
4.8
mΩ
6.3
mΩ
6.4
V
0.2
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.26 K/W
K/W
K/W
© by SEMIKRON


Part Number SEMiX205TMLI12E4B
Description IGBT
Maker Semikron
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SEMiX205TMLI12E4B Datasheet PDF






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