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SEMiX303GB12M7p - IGBT

Key Features

  • br>.
  • Homogeneous Si.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • High overload capability.
  • Low loss high density IGBTs.
  • Press-fit pins as auxiliary contacts.
  • UL recognized, file no. E63532 Typical.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMiX303GB12M7p SEMiX® 3p Trench IGBT Modules SEMiX303GB12M7p Features* • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High overload capability • Low loss high density IGBTs • Press-fit pins as auxiliary contacts • UL recognized, file no. E63532 Typical Applications • AC inverter drives • UPS • Renewable energy systems Remarks • Product reliability results are valid for Tj=150°C (recommended Tj,op=-40...