Datasheet4U Logo Datasheet4U.com

SEMiX303GB12E4I50p - IGBT

Key Features

  • br>.
  • Homogeneous Si.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability.
  • Press-fit pins as auxiliary contacts.
  • Current sensing shunt resistor.
  • UL recognized, file no. E63532 Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SEMIX303GB12E4S IGBT Semikron International
SEMIX303GB12T4S IGBT Semikron International
SEMiX303GB12Vs IGBT Semikron International
SEMIX303GD12E4C IGBT Semikron International
SEMIX303GD12T4C IGBT Semikron International

Other Datasheets by Semikron Danfoss

Part Number Description
SEMiX303GB12E4p IGBT
SEMiX303GB12M7p IGBT
SEMiX303GB17E4p IGBT
SEMiX303GB17E4s IGBT
SEMIX303GD12VC High short circuit capability

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMiX303GB12E4I50p SEMiX® 3p shunt Trench IGBT Modules SEMiX303GB12E4I50p Features* • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • Current sensing shunt resistor • UL recognized, file no.