The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMiX603GAL066HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX603GAL066HDs
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • UL recognised file no. E63532
Typical Applications*
• Matrix Converter • Resonant Inverter • Current Source Inverter
Remarks
• Case temperature limited to TC=125°C max.
SEMiX603GAL066HDs Datasheet
