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Semikron Electronic Components Datasheet

SEMiX603GAL12E4p Datasheet

IGBT

No Preview Available !

SEMiX603GAL12E4p
SEMiX® 3p
Trench IGBT Modules
SEMiX603GAL12E4p
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
Tj=150°C
• Visol between temperature sensor and
power section is only 2500V
• For storage and case temperature with
TIM see document “TP(*) SEMiX 3p”
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Inverse diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
module without TIM
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 600 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 22.2 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
Values
1200
1110
853
600
1800
-20 ... 20
10
-40 ... 175
1200
856
640
600
1200
3456
-40 ... 175
1200
856
640
600
1200
3456
-40 ... 175
600
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
V
A
A
A
A
A
°C
A
°C
V
min.
5.3
typ.
1.80
2.03
0.87
0.77
1.55
2.1
5.8
37.5
2.31
2.04
3450
1.2
max. Unit
2.05
V
2.30
V
1.01
V
0.9
V
1.73 mΩ
2.3
mΩ
6.3
V
5
mA
nF
nF
nF
nC
Ω
GAL
© by SEMIKRON
Rev. 1.0 – 24.11.2017
1


Semikron Electronic Components Datasheet

SEMiX603GAL12E4p Datasheet

IGBT

No Preview Available !

SEMiX603GAL12E4p
SEMiX® 3p
Trench IGBT Modules
SEMiX603GAL12E4p
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
Tj=150°C
• Visol between temperature sensor and
power section is only 2500V
• For storage and case temperature with
TIM see document “TP(*) SEMiX 3p”
Characteristics
Symbol Conditions
IGBT
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Rth(c-s)
Rth(c-s)
VCC = 600 V
Tj = 150 °C
IC = 600 A
VGE = +15/-15 V
RG on = 1.5 Ω
RG off = 1.5 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 7270 A/µs Tj = 150 °C
di/dtoff = 4270 A/µs
du/dt = 3500 V/µs Tj = 150 °C
Ls = 21 nH
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
Inverse diode
VF = VEC
IF = 600 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 6880 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Rth(j-c)
per diode
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
Rth(c-s)
per diode, pre-applied phase change
material
Freewheeling diode
VF = VEC
IF = 600 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 600 A
Tj = 150 °C
di/dtoff = 6880 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
Rth(j-c)
per diode
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
Rth(c-s)
per diode, pre-applied phase change
material
min.
typ.
max. Unit
160
80
59
540
130
76
0.035
0.025
ns
ns
mJ
ns
ns
mJ
0.037 K/W
K/W
K/W
2.08
2.08
1.39
1.08
1.16
1.67
480
90
33
0.039
0.031
2.44
V
2.34
V
1.59
V
1.18
V
1.42 mΩ
1.93 mΩ
A
µC
mJ
0.065 K/W
K/W
K/W
2.08
2.08
1.39
1.08
1.16
1.67
480
90
33
0.039
0.031
2.44
V
2.34
V
1.59
V
1.18
V
1.42 mΩ
1.93 mΩ
A
µC
mJ
0.065 K/W
K/W
K/W
GAL
2
Rev. 1.0 – 24.11.2017
© by SEMIKRON


Part Number SEMiX603GAL12E4p
Description IGBT
Maker Semikron
PDF Download

SEMiX603GAL12E4p Datasheet PDF






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