SK10DGDL12T7ETE1 Datasheet PDF (IGBT) | Download Semikron SK10DGDL12T7ETE1

SK10DGDL12T7ETE1 - IGBT

Features

br>.
Optimized design for superior thermal performance.
Low inductive design.
Press-Fit contact technology.
1200V Generation 7 IGBT (T7).
Robust and soft switching CAL4F diode technology.
PEP rectifier diode technology for enhanced power and environmental robustness.
Integrated NTC temperature sensor.
UL recognized file no. E 63 532 Typical.

Datasheet Details

Part number	SK10DGDL12T7ETE1
Manufacturer	Semikron
File Size	969.93 KB
Description	IGBT
Datasheet	SK10DGDL12T7ETE1 Datasheet
Additional preview pages of the SK10DGDL12T7ETE1 datasheet.

📁 Similar Datasheet

SK10DGDL12T4ET - IGBT (Semikron International)

SK10DGDL126ET - IGBT (Semikron International)

SK10DGDL065ET - IGBT (Semikron International)

SK10DGDL26ET - IGBT (Semikron International)

SK100 - PNP Transistor (Teamasia)

SK100B - Bridge Rectifier (Semikron International)

SK100DGDL066T - IGBT (Semikron International)

SK100E016 - 8-Bit Synchronous Binary Up Counter (Semtech Corporation)

SK100E111 - 1:9 Differential Clock Driver (Semtech Corporation)

SK100E116 - Quint Differential Line Receiver (Semtech Corporation)

Full PDF Text Transcription

Click to expand full text

SK10DGDL12T7ETE1 SEMITOP®E1 3-phase Converter-Inverter-Brake (CIB) Engineering Sample SK10DGDL12T7ETE1 Target Data Features* • Optimized design for superior thermal performance • Low inductive design • Press-Fit contact technology • 1200V Generation 7 IGBT (T7) • Robust and soft switching CAL4F diode technology • PEP rectifier diode technology for enhanced power and environmental robustness • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applications • Motor drives • Air conditioning • Auxiliary Inverters Remarks • Recommended Tj,op=-40 ...+150 °C Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C IC λpaste=2.

Published: Mar 20, 2021 |