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Semikron Electronic Components Datasheet

SK10DGDL12T7ETE1 Datasheet

IGBT

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SK10DGDL12T7ETE1
SEMITOP®E1
3-phase
Converter-Inverter-Brake
(CIB)
Engineering Sample
SK10DGDL12T7ETE1
Target Data
Features*
• Optimized design for superior thermal
performance
• Low inductive design
• Press-Fit contact technology
• 1200V Generation 7 IGBT (T7)
• Robust and soft switching CAL4F
diode technology
• PEP rectifier diode technology for
enhanced power and environmental
robustness
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Air conditioning
• Auxiliary Inverters
Remarks
• Recommended Tj,op=-40 ...+150 °C
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES
IC
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
ICnom
ICRM
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 175 °C
Chopper - IGBT
VCES
IC
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
ICnom
ICRM
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 175 °C
Inverse - Diode
VRRM
IF
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Freewheeling - Diode
VRRM
IF
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Values
1200
21
17
25
20
10
20
-20 ... 20
7
-40 ... 175
1200
21
17
25
20
10
20
-20 ... 20
7
-40 ... 175
1200
15
12
16
13
20
36
-40 ... 175
1200
15
12
16
13
20
36
-40 ... 175
Unit
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
°C
V
A
A
A
A
A
A
°C
DGDL-ET
© by SEMIKRON
Rev. 0.5 – 01.02.2021
1


Semikron Electronic Components Datasheet

SK10DGDL12T7ETE1 Datasheet

IGBT

No Preview Available !

SK10DGDL12T7ETE1
SEMITOP®E1
3-phase
Converter-Inverter-Brake
(CIB)
Engineering Sample
SK10DGDL12T7ETE1
Target Data
Features*
• Optimized design for superior thermal
performance
• Low inductive design
• Press-Fit contact technology
• 1200V Generation 7 IGBT (T7)
• Robust and soft switching CAL4F
diode technology
• PEP rectifier diode technology for
enhanced power and environmental
robustness
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Air conditioning
• Auxiliary Inverters
Remarks
• Recommended Tj,op=-40 ...+150 °C
Absolute Maximum Ratings
Symbol Conditions
Rectifier - Diode
VRRM
IF
IF
IFSM
i2t
Tj
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
tp = 10 ms
sin 180°
tp = 10 ms
sin 180°
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Module
It(RMS)
Tstg
Visol
, Tterminal at PCB joint = 30 K, per pin
module without TIM
AC, sinusoidal, 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 10 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VCE0
rCE
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
VGE = VCE, IC = 0.22 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = -15V...+15V
Tj = 25 °C
VCC = 600 V
IC = 10 A
RG on = 8.2 Ω
RG off = 8.2 Ω
VGE = +15/-15 V
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
(Tj = 150 °C)
Tj = 175 °C
Eon
di/dton = 700 A/µs Tj = 25 °C
di/dtoff = 120 A/µs
dv/dt = 3700 V/µs
Tj = 150 °C
Tj = 175 °C
Values
1600
44
35
51
40
220
200
242
200
-40 ... 175
30
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
A2s
A2s
°C
A
°C
V
min.
typ.
max. Unit
1.60
1.75
V
1.82
1.96
V
1.86
2.00
V
0.90
1.00
V
0.75
0.83
V
0.72
0.80
V
70
75
mΩ
107
113
mΩ
114
120
mΩ
5.15
5.8
6.45
V
1
mA
1.9
nF
0.0244
nF
0.0066
nF
140
nC
0
Ω
13
ns
16
ns
17
ns
18
ns
19
ns
20
ns
0.42
mJ
0.74
mJ
0.81
mJ
DGDL-ET
2
Rev. 0.5 – 01.02.2021
© by SEMIKRON


Part Number SK10DGDL12T7ETE1
Description IGBT
Maker Semikron
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SK10DGDL12T7ETE1 Datasheet PDF






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