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Semikron Electronic Components Datasheet

SK120GB12F4T Datasheet

IGBT

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SK 120 GB 12F4 T
SEMITOP® 3
IGBT module
SK 120 GB 12F4 T
Target Data
Features
• Compact design
• One screw mounting module
• Optimum heat transfer and isolation
through AlN direct copper bonding
(DBC)
• Trench4 Fast IGBT technology
• CAL4F diode technology
• Integrated NTC temperature sensor
• UL recognized, file no. E 63 532
Typical Applications*
• Switching (not for linear use)
• Inverter
• Switched mode power supplies
• UPS
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
ICnom
ICRM
ICRM = 3 x ICnom
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Inverse - Diode
IF
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
10 ms, sin 180°, Tj = 150 °C
Tj
Module
It(RMS)
,
Tstg
Visol
AC, sinusoidal, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 120 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C
Tj = 150 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE(th)
VGE = VCE, IC = 4.5 mA
ICES
VGE = 0 V
Tj = 25 °C
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
QG
- 15 V...+ 15 V
RGint
Tj = 25 °C
td(on)
tr
Eon
td(off)
tf
Eoff
VCC = 600 V
Tj = 150 °C
IC = 120 A
Tj = 150 °C
RG on = 2.2
RG off = 2.2
di/dton = 2354 A/µs
Tj = 150 °C
Tj = 150 °C
di/dtoff = 2264 A/µs Tj = 150 °C
VGE = +15/-15 V Tj = 150 °C
Rth(j-s)
per IGBT
Values
1200
174
143
120
360
-20 ... 20
10
-40 ... 175
29
24
15
45
65
-40 ... 175
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
2.05
2.40
V
2.50
2.85
V
0.80
0.90
V
0.70
0.80
V
10
13
m
15
17
m
5.2
5.8
6.4
V
1.6
mA
mA
6.9
nF
0.555
nF
0.405
nF
430
nC
2.7
156
ns
51
ns
8.8
mJ
346
ns
42
ns
7.47
mJ
0.22
0.25 K/W
GB-T
© by SEMIKRON
Rev. 0.1 – 18.04.2016
1


Semikron Electronic Components Datasheet

SK120GB12F4T Datasheet

IGBT

No Preview Available !

SK 120 GB 12F4 T
SEMITOP® 3
IGBT module
SK 120 GB 12F4 T
Target Data
Features
• Compact design
• One screw mounting module
• Optimum heat transfer and isolation
through AlN direct copper bonding
(DBC)
• Trench4 Fast IGBT technology
• CAL4F diode technology
• Integrated NTC temperature sensor
• UL recognized, file no. E 63 532
Typical Applications*
• Switching (not for linear use)
• Inverter
• Switched mode power supplies
• UPS
Characteristics
Symbol Conditions
Inverse - Diode
VF = VEC IF = 15 A
Tj = 25 °C
VF0
rF
IRRM
Qrr
Err
Rth(j-s)
Module
LCE
Ms
w
chiplevel
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 120 A
Tj = 150 °C
di/dtoff = 1948 A/µs
VGE = -15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per Diode
to heatsink
Temperature Sensor
R100
Tc=100°C (R25=5 k)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
min.
2.25
typ.
2.38
2.44
1.30
0.90
72
103
43.4
5.7
2.04
1.25
29
493 ± 5%
3550
±2%
max.
2.71
2.77
1.50
1.10
81
111
1.34
2.5
Unit
V
V
V
V
m
m
A
µC
mJ
K/W
nH
Nm
g
K
GB-T
2
Rev. 0.1 – 18.04.2016
© by SEMIKRON


Part Number SK120GB12F4T
Description IGBT
Maker Semikron
PDF Download

SK120GB12F4T Datasheet PDF






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