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Semikron Electronic Components Datasheet

SK151GALE07F3TUF Datasheet

IGBT

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SK 151 GALE 07F3 TUF
SEMITOP® 3
IGBT module
SK 151 GALE 07F3 TUF
Features
• Compact design
• One screw mounting module
• Optimum heat transfer and isolation
through direct copper bonding
aluminium oxide ceramic (DBC)
• 650V Fast IGBT technology
• Ultrafast switching free-wheeling diode
• Integrated NTC temperature sensor
• UL recognized, file no. E 63 532
Typical Applications*
• Switching (not for linear use)
• Inverter
• Switch mode power supply
• UPS
Absolute Maximum Ratings
Symbol Conditions
IGBT 2
VCES
IC
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
ICRM = 3 x ICnom
VCC = 400 V
VGE 15 V
VCES 650 V
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Diode 2
VRRM
IF
IFnom
IFSM
i2t
Tj
Tj = 25 °C
Tj = 150 °C
Ts = 25 °C
Ts = 70 °C
10 ms, sin 180°, Tj = 150 °C
10 ms, sin 180°, Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Diode 3
VRRM
IF
IF
IFnom
IFRM
IFSM
Tj
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 150 °C
Absolute Maximum Ratings
Symbol Conditions
Diode 4
VRRM
IF
IFnom
IFSM
I2t
Tj
Tj = 150 °C
Ts = 25 °C
Ts = 70 °C
10 ms, sin 180°, Tj = 150 °C
10 ms, sin 180°, Tj = 150 °C
GALE-T
© by SEMIKRON
Rev. 2.0 – 10.05.2018
Values
650
128
95
144
114
150
450
-20 ... 20
5
-40 ... 175
Values
600
116
85
150
988
4880
-40 ... 150
Values
600
25
19
28
22
20
40
95
-40 ... 175
Values
1600
67
49
25
490
1200
-40 ... 150
Unit
V
A
A
A
A
A
A
V
µs
°C
Unit
V
A
A
A
A
A²s
°C
Unit
V
A
A
A
A
A
A
A
°C
Unit
V
A
A
A
A
A2s
°C
1


Semikron Electronic Components Datasheet

SK151GALE07F3TUF Datasheet

IGBT

No Preview Available !

SK 151 GALE 07F3 TUF
SEMITOP® 3
IGBT module
SK 151 GALE 07F3 TUF
Features
• Compact design
• One screw mounting module
• Optimum heat transfer and isolation
through direct copper bonding
aluminium oxide ceramic (DBC)
• 650V Fast IGBT technology
• Ultrafast switching free-wheeling diode
• Integrated NTC temperature sensor
• UL recognized, file no. E 63 532
Typical Applications*
• Switching (not for linear use)
• Inverter
• Switch mode power supply
• UPS
Absolute Maximum Ratings
Symbol Conditions
Module
It(RMS)
Tstg
Visol
AC, sinusoidal, 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT 2
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 150 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = VCE, IC = 2.4 mA
VGE = 0 V
VCE = 650 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 15 V...+ 15 V
Tj = 25 °C
VCC = 300 V
IC = 150 A
VGE neg = -15 V
VGE pos = 15 V
RG on = 15 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
RG off = 15 Ω
Tj = 150 °C
di/dton = 974 A/µs
di/dtoff = 3024 A/µs Tj = 150 °C
Rth(j-s)
per IGBT
Characteristics
Symbol Conditions
Diode 2
VF
VF0
IF = 150 A
VGE = 0 V
chiplevel
chiplevel
rF
chiplevel
IRRM
Qrr
Err
Rth(j-s)
IF = 150 A
di/dtoff = 891 A/µs
VGE = -15 V
VCC = 300 V
per Diode
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Values
-
-40 ... 125
2500
Unit
A
°C
V
min.
4.2
typ.
1.85
2.18
1.10
1.00
5.0
7.9
5.1
-
9.3
0.348
0.27
1380
1.6
153
130
8.8
719
43
4
0.41
max. Unit
2.22
V
2.55
V
1.20
V
1.10
V
6.8
mΩ
9.7
mΩ
5.6
V
0.2
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
min.
typ.
max. Unit
1.80
2.20
V
1.60
2.00
V
1.15
1.35
V
0.85
1.05
V
4.3
5.7
mΩ
5.0
6.3
mΩ
150
A
3.1
µC
0.26
mJ
0.62
K/W
GALE-T
2
Rev. 2.0 – 10.05.2018
© by SEMIKRON


Part Number SK151GALE07F3TUF
Description IGBT
Maker Semikron
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SK151GALE07F3TUF Datasheet PDF






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