SK25DGDL12T7ETE1
SEMITOP®E1
3-phase
Converter-Inverter-Brake
(CIB)
Engineering Sample
SK25DGDL12T7ETE1
Target Data
Features*
• Optimized design for superior thermal
performance
• Low inductive design
• Press-Fit contact technology
• 1200V Generation 7 IGBT (T7)
• Robust and soft switching CAL4F
diode technology
• PEP rectifier diode technology for
enhanced power and environmental
robustness
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Air conditioning
• Auxiliary Inverters
Remarks
• Recommended Tj,op=-40 ...+150 °C
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES
IC
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
ICnom
ICRM
VGES
tpsc
Tj
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 175 °C
Chopper - IGBT
VCES
IC
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
ICnom
ICRM
VGES
tpsc
Tj
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 175 °C
Inverse - Diode
VRRM
IF
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Freewheeling - Diode
VRRM
IF
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Values
1200
41
33
47
38
25
50
-20 ... 20
7
-40 ... 175
1200
41
33
47
38
25
50
-20 ... 20
7
-40 ... 175
1200
21
17
24
20
45
65
-40 ... 175
1200
15
12
16
13
20
36
-40 ... 175
Unit
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
V
µs
°C
V
A
A
A
A
A
A
°C
V
A
A
A
A
A
A
°C
DGDL-ET
© by SEMIKRON
Rev. 0.4 – 28.01.2021
1
