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Semikron Electronic Components Datasheet

SK50GD12T7ETE1 Datasheet

IGBT

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SK50GD12T7ETE1
SEMITOP®E1
Sixpack Open Emitter
Engineering Sample
SK50GD12T7ETE1
Target Data
Features*
• Optimized design for superior thermal
performance
• Low inductive design
• Press-Fit contact technology
• 1200V Generation 7 IGBT (T7)
• Robust and soft switching CAL4F
diode technology
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Servo drives
• Air conditioning
• Auxiliary Inverters
• UPS
Remarks
• Recommended Tj,op=-40 ...+150 °C
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES
IC
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
λpaste=2.5 W/(mK)
Tj = 175 °C
Ts = 25 °C
Ts = 70 °C
Ts = 25 °C
Ts = 70 °C
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 175 °C
Inverse - Diode
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Module
It(RMS)
Tstg
Visol
, Tterminal at PCB joint = 30 K, per pin
module without TIM
AC, sinusoidal, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 50 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VCE0
Tj = 25 °C
chiplevel
Tj = 150 °C
Tj = 175 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VGE(th)
VGE = VCE, IC = 1.27 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
QG
VGE = -15V...+15V
RGint
Tj = 25 °C
Values
1200
64
52
79
64
50
100
-20 ... 20
7
-40 ... 175
41
33
49
39
100
170
-40 ... 175
30
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
V
µs
°C
A
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.58
1.74
V
1.78
2.03
V
1.82
2.09
V
0.90
1.00
V
0.75
0.83
V
0.72
0.80
V
14
15
mΩ
21
24
mΩ
22
26
mΩ
5.15
5.8
6.45
V
1
mA
9.9
nF
0.1265
nF
0.036
nF
798
nC
0
Ω
GD-ET
© by SEMIKRON
Rev. 0.3 – 09.02.2021
1


Semikron Electronic Components Datasheet

SK50GD12T7ETE1 Datasheet

IGBT

No Preview Available !

SK50GD12T7ETE1
SEMITOP®E1
Sixpack Open Emitter
Engineering Sample
SK50GD12T7ETE1
Target Data
Features*
• Optimized design for superior thermal
performance
• Low inductive design
• Press-Fit contact technology
• 1200V Generation 7 IGBT (T7)
• Robust and soft switching CAL4F
diode technology
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
Typical Applications
• Motor drives
• Servo drives
• Air conditioning
• Auxiliary Inverters
• UPS
Remarks
• Recommended Tj,op=-40 ...+150 °C
Characteristics
Symbol Conditions
Inverter - IGBT
td(on)
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
tr
Tj = 25 °C
Eon
td(off)
tf
VCC = 600 V
IC = 50 A
RG on = 5.1 Ω
RG off = 5.1 Ω
VGE = +15/-15 V
(Tj = 150 °C)
di/dton = 990 A/µs
di/dtoff = 440 A/µs
dv/dt = 4500 V/µs
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Eoff
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
Characteristics
Symbol Conditions
Inverse - Diode
VF = VEC IF = 50 A
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
rF
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
IRRM
Tj = 25 °C
Tj = 150 °C
Qrr
IF = 50 A
VGE = +15/-15 V
Tj = 175 °C
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
Err
(Tj = 150 °C)
di/dtoff = 1010 A/µs
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Rth(j-s)
Rth(j-s)
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
Module
LCE
Ms
to heatsink
w
GD-ET
2
Rev. 0.3 – 09.02.2021
min.
typ.
max. Unit
39
ns
40
ns
41
ns
37
ns
41
ns
42
ns
3.04
mJ
4.59
mJ
5.16
mJ
204
ns
271
ns
281
ns
41
ns
65
ns
89
ns
3.21
mJ
5.28
mJ
5.59
mJ
0.94
K/W
0.66
K/W
min.
typ.
max. Unit
2.73
3.10
V
2.89
3.27
V
2.71
3.09
V
1.30
1.50
V
0.90
1.10
V
0.82
0.98
V
29
32
mΩ
40
43
mΩ
38
42
mΩ
23
A
31
A
32
A
1.84
µC
5.43
µC
6.13
µC
0.67
mJ
2.41
mJ
2.53
mJ
1.34
K/W
1.01
K/W
30
nH
1.6
2.3
Nm
25
g
© by SEMIKRON


Part Number SK50GD12T7ETE1
Description IGBT
Maker Semikron
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SK50GD12T7ETE1 Datasheet PDF






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