SKM100GAL12F4
SEMITRANS® 2
High Speed IGBT4 Modules
SKM100GAL12F4
Features*
• High speed trench and field-stop IGBT
• CAL4 ultra-fast = soft switching 4.
generation CAL-diode
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• For higher switching frequencies above
15kHz
• UL recognized, file no. E63532
Typical Applications
• Electronic welders
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Characteristics
Symbol Conditions
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Rth(c-s)
VCC = 600 V
Tj = 150 °C
IC = 100 A
VGE = +15/-15 V
RG on = 3.9 Ω
RG off = 3.9 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 5000 A/µs Tj = 150 °C
di/dtoff = 1300 A/µs
dv/dt = 4300 V/µs Tj = 150 °C
Ls = 26 nH
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
Inverse diode
VF = VEC
IF = 100 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
Rth(c-s)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 100 A
Tj = 150 °C
di/dtoff = 5000 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
per diode (λgrease=0.81 W/(m*K))
Freewheeling diode
VF = VEC
IF = 100 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
Rth(c-s)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 100 A
Tj = 150 °C
di/dtoff = 5000 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
per diode (λgrease=0.81 W/(m*K))
Module
LCE
RCC'+EE'
Rth(c-s)1
Rth(c-s)2
Ms
Mt
measured per
TC = 25 °C
switch
TC = 125 °C
calculated without thermal coupling
(λgrease=0.81 W/(m*K))
including thermal coupling,
Ts underneath module
(λgrease=0.81 W/(m*K))
to heat sink M6
to terminals M5
w
min.
typ.
12
20
6.6
315
65
8
0.122
max.
0.238
Unit
ns
ns
mJ
ns
ns
mJ
K/W
K/W
2.55
2.46
1.51
1.16
10
13
200
16.5
6.3
0.134
2.93
V
2.80
V
1.75
V
1.40
V
12
mΩ
14
mΩ
A
µC
mJ
0.483 K/W
K/W
2.55
2.46
1.51
1.16
10
13
200
16.5
6.3
0.134
2.93
V
2.80
V
1.75
V
1.40
V
12
mΩ
14
mΩ
A
µC
mJ
0.483 K/W
K/W
30
nH
0.65
mΩ
1.09
mΩ
0.0639
K/W
0.071
K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GAL
2
Rev. 2.0 – 15.11.2019
© by SEMIKRON
