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Semikron Electronic Components Datasheet

SKM100GAL12F4 Datasheet

IGBT

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SKM100GAL12F4
SEMITRANS® 2
High Speed IGBT4 Modules
SKM100GAL12F4
Features*
• High speed trench and field-stop IGBT
• CAL4 ultra-fast = soft switching 4.
generation CAL-diode
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• For higher switching frequencies above
15kHz
• UL recognized, file no. E63532
Typical Applications
• Electronic welders
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 2 x ICnom
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Inverse diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
module without TIM
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
IC = 100 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 3.8 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
GAL
© by SEMIKRON
Rev. 2.0 – 15.11.2019
Values
1200
153
117
100
200
-20 ... 20
10
-40 ... 175
1200
111
82
100
200
550
-40 ... 175
1200
111
82
100
200
550
-40 ... 175
200
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
V
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
2.05
2.38
V
2.55
2.93
V
1.10
1.28
V
0.95
1.13
V
9.5
11
mΩ
16
18
mΩ
5.1
5.8
6.4
V
1
mA
-
mA
6.2
nF
0.41
nF
0.35
nF
567
nC
0
Ω
1


Semikron Electronic Components Datasheet

SKM100GAL12F4 Datasheet

IGBT

No Preview Available !

SKM100GAL12F4
SEMITRANS® 2
High Speed IGBT4 Modules
SKM100GAL12F4
Features*
• High speed trench and field-stop IGBT
• CAL4 ultra-fast = soft switching 4.
generation CAL-diode
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• For higher switching frequencies above
15kHz
• UL recognized, file no. E63532
Typical Applications
• Electronic welders
• DC/DC – converter
• Brake chopper
• Switched reluctance motor
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Characteristics
Symbol Conditions
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Rth(c-s)
VCC = 600 V
Tj = 150 °C
IC = 100 A
VGE = +15/-15 V
RG on = 3.9 Ω
RG off = 3.9 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 5000 A/µs Tj = 150 °C
di/dtoff = 1300 A/µs
dv/dt = 4300 V/µs Tj = 150 °C
Ls = 26 nH
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
Inverse diode
VF = VEC
IF = 100 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
Rth(c-s)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 100 A
Tj = 150 °C
di/dtoff = 5000 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
per diode (λgrease=0.81 W/(m*K))
Freewheeling diode
VF = VEC
IF = 100 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
Rth(c-s)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 100 A
Tj = 150 °C
di/dtoff = 5000 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
per diode (λgrease=0.81 W/(m*K))
Module
LCE
RCC'+EE'
Rth(c-s)1
Rth(c-s)2
Ms
Mt
measured per
TC = 25 °C
switch
TC = 125 °C
calculated without thermal coupling
(λgrease=0.81 W/(m*K))
including thermal coupling,
Ts underneath module
(λgrease=0.81 W/(m*K))
to heat sink M6
to terminals M5
w
min.
typ.
12
20
6.6
315
65
8
0.122
max.
0.238
Unit
ns
ns
mJ
ns
ns
mJ
K/W
K/W
2.55
2.46
1.51
1.16
10
13
200
16.5
6.3
0.134
2.93
V
2.80
V
1.75
V
1.40
V
12
mΩ
14
mΩ
A
µC
mJ
0.483 K/W
K/W
2.55
2.46
1.51
1.16
10
13
200
16.5
6.3
0.134
2.93
V
2.80
V
1.75
V
1.40
V
12
mΩ
14
mΩ
A
µC
mJ
0.483 K/W
K/W
30
nH
0.65
mΩ
1.09
mΩ
0.0639
K/W
0.071
K/W
3
5
Nm
2.5
5
Nm
Nm
160
g
GAL
2
Rev. 2.0 – 15.11.2019
© by SEMIKRON


Part Number SKM100GAL12F4
Description IGBT
Maker Semikron
PDF Download

SKM100GAL12F4 Datasheet PDF






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