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Semikron Electronic Components Datasheet

SKM450GB12E4D1 Datasheet

IGBT

No Preview Available !

SKM450GB12E4D1
SEMITRANS® 3
IGBT4 Modules
SKM450GB12E4D1
Features*
• IGBT4 = 4th generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4th generation
CAL-diode
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequencies up to
12kHz
• UL recognized, file no. E63532
• SKM…D1: increased diode
performance
Typical Applications
• AC inverter drives
• UPS
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
GB
© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
VGES
tpsc
Tj
ICRM = 3 x ICnom
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 150 °C
Inverse diode
VRRM
IF
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS)
Tstg
Visol
module without TIM
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 450 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 16.4 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 450 A
VGE = +15/-15 V
RG on = 1 Ω
RG off = 1 Ω
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 8100 A/µs Tj = 150 °C
di/dtoff = 3400 A/µs
Tj = 150 °C
Rth(j-c)
Rth(c-s)
Rth(c-s)
per IGBT
per IGBT (λgrease=0.81 W/(m*K))
per IGBT, pre-applied phase change
material
Rev. 1.0 – 11.09.2019
Values
1200
699
538
450
1350
-20 ... 20
10
-40 ... 175
1200
623
466
500
1000
2736
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
V
A
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.84
2.23
0.80
0.70
2.3
3.4
5.8
27.2
1.76
1.50
2500
1.9
253
59
28
505
112
58
0.028
0.017
max. Unit
2.07
V
2.42
V
0.90
V
0.80
V
2.6
mΩ
3.6
mΩ
6.5
V
5
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
0.062 K/W
K/W
K/W
1


Semikron Electronic Components Datasheet

SKM450GB12E4D1 Datasheet

IGBT

No Preview Available !

SKM450GB12E4D1
SEMITRANS® 3
IGBT4 Modules
SKM450GB12E4D1
Features*
• IGBT4 = 4th generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4th generation
CAL-diode
• Insulated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequencies up to
12kHz
• UL recognized, file no. E63532
• SKM…D1: increased diode
performance
Typical Applications
• AC inverter drives
• UPS
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 450 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 150 °C
IF = 450 A
Tj = 150 °C
di/dtoff = 8000 A/µs
VGE = -15 V
VCC = 600 V
Tj = 150 °C
Tj = 150 °C
per diode
Rth(c-s)
per diode (λgrease=0.81 W/(m*K))
Rth(c-s)
per diode, pre-applied phase change
material
Module
LCE
RCC'+EE'
Rth(c-s)1
Rth(c-s)2
Rth(c-s)2
Ms
Mt
measured per
switch
TC = 25 °C
TC = 125 °C
calculated without thermal coupling
including thermal coupling,
Ts underneath module
(λgrease=0.81 W/(m*K))
including thermal coupling,
Ts underneath module, pre-applied
phase change material
to heat sink M6
to terminals M6
w
min.
3
2.5
typ.
max. Unit
2.04
1.94
1.30
0.90
1.64
2.3
504
75
31
0.037
0.03
2.35
V
2.23
V
1.50
V
1.10
V
1.88 mΩ
2.5
mΩ
A
µC
mJ
0.095 K/W
K/W
K/W
15
nH
0.55
mΩ
0.85
mΩ
0.008
K/W
0.013
K/W
0.009
K/W
5
Nm
5
Nm
Nm
325
g
GB
2
Rev. 1.0 – 11.09.2019
© by SEMIKRON


Part Number SKM450GB12E4D1
Description IGBT
Maker Semikron
PDF Download

SKM450GB12E4D1 Datasheet PDF






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