SKiM429GD17E4V5
Features
-
- IGBT 4 Trench Gate Technology
- Solderless sinter technology
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Insulated by Al2O3 DBC (Direct Bonded
Copper) ceramic substrate
- Pressure contact technology for thermal contacts
- Spring contact system to attach driver
PCB to the control terminals
- High short circuit capability, self limiting to 6 x IC
- Integrated temperature sensor
- Improved power cycle capability of diodes due to Al Cu-bond wires
Typical Applications
- Automotive inverter
- High reliability AC inverter wind
- High reliability AC inverter drives
Remarks
- Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules)
- Remended Top = -40 … +150°C
GD © by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
Inverter
- IGBT
VCES IC
Tj = 25 °C λpaste=0.8 W/(m K) Tj = 175 °C
Ts = 25 °C Ts = 70 °C
λpaste=2.5 W/(m K) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
ICnom
ICRM
ICRM = 3 x ICnom
VGES tpsc Tj
VCC = 1000 V VGE...
