SKiM429GD17E4HD - IGBT

Datasheet Summary

Features

IGBT 4 Trench Gate Technology Solderless sinter technology Low inductance case Isolated by AL2O3 DCB (Direct Copper Bonded) ceramic substrate.
Pressure contact technology for thermal contacts and electrical contacts.
High short circuit capability, self limiting to 6 x IC.
Integrated temperature sensor.
IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on).

Semikron International

📥 Download Datasheet

Datasheet Details

Part number	SKiM429GD17E4HD
Manufacturer	Semikron International
File Size	238.08 KB
Description	IGBT
Datasheet	SKiM429GD17E4HD Datasheet
Additional preview pages of the SKiM429GD17E4HD datasheet.

📁 Similar Datasheet

SKiM429GD17E44F - IGBT (Semikron)
SKiM429GD17E4V5 - IGBT (Semikron)
SKiM401MLI07E4 - IGBT (Semikron)
SKiM401TMLI12E4B - IGBT (Semikron)
SKiM459GD12E4V2 - IGBT (Semikron)
SKiM201MLI12E4 - IGBT (Semikron)
SKiM301MLI07E4 - IGBT (Semikron)
SKiM301MLI12E4 - IGBT (Semikron)
SKiM301TMLI12E4B - IGBT (Semikron)
SKiM301TMLI12E4C - IGBT (Semikron)

Other Datasheets by Semikron International

Full PDF Text Transcription

Click to expand full text

SKiM429GD17E4HD Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 1200 V VGE ≤ 15 V VCES ≤ 1700 V VGES tpsc Tj Inverse diode IF Ts = 25 °C Ts = 70 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C 1700 595 479 420 1260 -20 ... 20 10 -40 ... 175 413 298 450 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 3699 -40 ... 150 700 -40 ...

Published: Aug 12, 2014 |