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Semikron Electronic Components Datasheet

SKiiP11AC12T7V1 Datasheet

IGBT

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SKiiP 11AC12T7V1
MiniSKiiP® 1
Sixpack
SKiiP 11AC12T7V1
Features*
• 1200V Generation 7 IGBTs (T7)
• Robust and soft switching freewheeling
diodes in CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognized: File no. E63532
Remarks
• Max. case temperature limited to
TC=TS=125 °C
• Product reliability results valid for
Tj150 °C (recommended
Tj,op=-40...+150 °C)
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
• For storage and case temperature with
TIM see document: “Technical
Explanations Thermal Interface
Materials”
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES
IC
Tj = 25 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
Ts = 70 °C
Ts = 100 °C
IC
λpaste=2.5 W/(mK) Ts = 70 °C
Tj = 175 °C
Ts = 100 °C
ICnom
ICRM
VGES
tpsc
Tj
VCC = 800 V
VGE 15 V
VCES 1200 V
Tj = 175 °C
Inverse - Diode
IF
λpaste=0.8 W/(mK) Ts = 70 °C
Tj = 175 °C
Ts = 100 °C
IF
λpaste=2.5 W/(mK) Ts = 70 °C
Tj = 175 °C
Ts = 100 °C
IFRM
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
Module
It(RMS)
Tstg
Tterminal = 80 °C, 20 A per spring
module without TIM
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 10 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VCE0
Tj = 25 °C
chiplevel
Tj = 150 °C
Tj = 175 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VGE(th)
VGE = VCE, IC = 0.22 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
QG
VGE = - 8V ... + 15 V
RGint
Tj = 25 °C
Values
1200
20
16
21
18
10
20
-20 ... 20
7
-40 ... 175
13
11
14
12
16
36
-40 ... 175
40
-40 ... 125
2500
Unit
V
A
A
A
A
A
A
V
µs
°C
A
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
1.60
1.75
V
1.82
1.96
V
1.86
2.00
V
0.90
1.00
V
0.75
0.83
V
0.72
0.80
V
70
75
mΩ
107
113
mΩ
114
120
mΩ
5.15
5.8
6.45
V
1
mA
1.90
nF
0.02
nF
0.01
nF
140
nC
0
Ω
AC
© by SEMIKRON
Rev. 1.0 – 30.10.2020
1


Semikron Electronic Components Datasheet

SKiiP11AC12T7V1 Datasheet

IGBT

No Preview Available !

SKiiP 11AC12T7V1
MiniSKiiP® 1
Sixpack
SKiiP 11AC12T7V1
Features*
• 1200V Generation 7 IGBTs (T7)
• Robust and soft switching freewheeling
diodes in CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognized: File no. E63532
Remarks
• Max. case temperature limited to
TC=TS=125 °C
• Product reliability results valid for
Tj150 °C (recommended
Tj,op=-40...+150 °C)
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
• For storage and case temperature with
TIM see document: “Technical
Explanations Thermal Interface
Materials”
Characteristics
Symbol Conditions
Inverter - IGBT
td(on)
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
tr
Tj = 25 °C
VCC = 600 V
IC = 10 A
Tj = 150 °C
Tj = 175 °C
Eon
RG on = 32 Ω
Tj = 25 °C
RG off = 32 Ω
VGE = +15/-15 V
Tj = 150 °C
Tj = 175 °C
td(off)
Tj = 25 °C
@ Tj = 150 °C:
Tj = 150 °C
di/dton = 190 A/µs Tj = 175 °C
tf
di/dtoff = 130 A/µs
dv/dt = 3580 V/µs
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Eoff
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
Characteristics
Symbol Conditions
Inverse - Diode
VF = VEC
IF = 10 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VF0
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
rF
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
IRRM
Qrr
IF = 10 A
VGE = +15/-15 V
VCC = 600 V
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
@ Tj = 150 °C:
Tj = 175 °C
Err
di/dtoff = 210 A/µs Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Rth(j-s)
Rth(j-s)
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
Module
LCE
Ms
to heat sink
w
AC
2
Rev. 1.0 – 30.10.2020
min.
typ.
max. Unit
44
ns
46
ns
47
ns
39
ns
44
ns
47
ns
0.88
mJ
1.2
mJ
1.3
mJ
198
ns
288
ns
313
ns
42
ns
63
ns
85
ns
0.65
mJ
1.1
mJ
1.2
mJ
1.7
K/W
1.46
K/W
min.
typ.
max. Unit
2.59
2.94
V
2.71
3.08
V
2.53
2.89
V
1.30
1.50
V
0.90
1.10
V
0.82
0.98
V
129
144
mΩ
181
198
mΩ
171
191
mΩ
6
A
7
A
8
A
0.7
µC
1.4
µC
1.6
µC
0.19
mJ
0.53
mJ
0.69
mJ
2.33
K/W
2
K/W
-
nH
2
2.5
Nm
30
g
© by SEMIKRON


Part Number SKiiP11AC12T7V1
Description IGBT
Maker Semikron
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SKiiP11AC12T7V1 Datasheet PDF






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