SEMIX352GAR128DS Description
125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMiX®2s SPT IGBT Modules SEMiX352GAR128Ds Tj Inverse diode IF IFnom IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 150 °C Preliminary Data.
SEMIX352GAR128DS Key Features
- Homogeneous Si
- SPT = Soft-Punch-Through technology
- VCE(sat) with positive temperature coefficient
- High short circuit capability
- UL recognised file no. E63532