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SEMIX353GB126HDS - IGBT

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Overview

SEMiX353GB126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 364 256 225 450 -20 ...

20 10 -40 ...

150 329 228 225 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 1700 -40 ...

150 600 -40 ...

125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 3s Trench IGBT Modules SEMiX353GB126HDs www.DataSheet4U.

Key Features

  • Homogeneous Si.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability.
  • UL recognised file no. E63532 Typical.

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