SEMIX353GD126HDC Description
125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 33c Trench IGBT Modules SEMiX353GD126HDc .. Tj = 150 °C IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol.
SEMIX353GD126HDC Key Features
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
- High short circuit capability
- UL recognised file no. E63532