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SEMiX302GB12Vs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 448 342 300 900 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 356 266 300 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 1620 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX® 2s
VGES tpsc Tj IF IFnom
Inverse diode
SEMiX302GB12Vs Features
• Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.
SEMiX302GB12Vs Datasheet
