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SEMiX302GB126HDs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 311 218 200 400 -20 ... 20 10 -40 ... 150 Tc = 25 °C Tc = 80 °C 292 202 200 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 400 1300 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX®2s
Trench IGBT Modules
SEMiX302GB126HDs
Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol
Preliminary Data www.DataSheet4U.com Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.
SEMIX302GB126HDS Datasheet
