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SKiM406GD066HD - IGBT

Key Features

  • IGBT 3 Trench Gate Technology.
  • Solderless sinter technology.
  • VCE(sat) with positive temperature coefficient.
  • Low inductance case.
  • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate.
  • Pressure contact technology for thermal contacts and electrical contacts.
  • High short circuit capability, self limiting to 6 x IC.
  • Integrated temperature sensor IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SKiM406GD066HD Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V VGES tpsc Tj Inverse diode IF Ts = 25 °C Ts = 70 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C 600 383 304 400 800 -20 ... 20 6 -40 ... 175 320 249 300 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 2340 -40 ... 175 700 -40 ...