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SKiM429GD17E4HD - IGBT

Key Features

  • IGBT 4 Trench Gate Technology Solderless sinter technology Low inductance case Isolated by AL2O3 DCB (Direct Copper Bonded) ceramic substrate.
  • Pressure contact technology for thermal contacts and electrical contacts.
  • High short circuit capability, self limiting to 6 x IC.
  • Integrated temperature sensor.
  • IFRM IFSM Tj Module It(RMS) Tstg Visol Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SKiM429GD17E4HD Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 1200 V VGE ≤ 15 V VCES ≤ 1700 V VGES tpsc Tj Inverse diode IF Ts = 25 °C Ts = 70 °C Tj = 150 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C 1700 595 479 420 1260 -20 ... 20 10 -40 ... 175 413 298 450 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 900 3699 -40 ... 150 700 -40 ...