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PE4419 - P-Channel Enhancement Mode Power MOSFET

Description

The PE4419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

  • VDS = -30V,ID = -11A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram PE4419.

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Datasheet Details

Part number PE4419
Manufacturer Semione
File Size 565.64 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE4419 Datasheet

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Full PDF Text Transcription

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PE4419 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE4419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -11A RDS(ON) < 30mΩ @ VGS=-4.
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