Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE4419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
GENERAL Features
- VDS = -30V,ID = -11A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V
S Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Marking and pin Assignment
Application
- Battery Switch
- Load switch
- Power management
SOP-8 top...
