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PE4419 - P-Channel Enhancement Mode Power MOSFET

General Description

The PE4419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Key Features

  • VDS = -30V,ID = -11A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram PE4419.

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Datasheet Details

Part number PE4419
Manufacturer Semione
File Size 565.64 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE4419 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE4419 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE4419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -11A RDS(ON) < 30mΩ @ VGS=-4.