PE4419
PE4419 is P-Channel Enhancement Mode Power MOSFET manufactured by Semione.
DESCRIPTION
The PE4419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
GENERAL FEATURES
- VDS = -30V,ID = -11A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
S Schematic diagram
Application
- Battery Switch
- Load switch
- Power management
Marking and pin Assignment
SOP-8 top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC =25℃
Continuous Drain Current (TJ =150℃)
TC =70℃ TA =25℃
TA =70℃
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics...
