PE4419 - P-Channel Enhancement Mode Power MOSFET

Description

The PE4419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

VDS = -30V,ID = -11A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram PE4419.

Semione

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Datasheet Details

Part number	PE4419
Manufacturer	Semione
File Size	565.64 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PE4419 Datasheet
Additional preview pages of the PE4419 datasheet.

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Full PDF Text Transcription

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PE4419 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE4419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -11A RDS(ON) < 30mΩ @ VGS=-4.

Published: Jul 18, 2018 |