20V N-Channel Enhancement Mode MOSFET
The STN8205A is the Dual N-Channel logic
enhancement mode power field effect transistor
which is produced using high cell density. advanced
trench technology to provide excellent RDS(ON).
This high density process is especially tailored
to minimize on-state resistance. These devices are
particularly suited for low voltage application , and
low in-line power loss are needed in a very small
outline surface mount package.
30V/6.0A, RDS(ON) =21mΩ(typ.)@VGS =4.5V
30V/5.2A, RDS(ON) =25mΩ(typ.)@VGS =2.5V
Super high density cell design for extremely low
Exceptional on-resistance and Maximum DC
STN8205AS-TRG ROHS Compliant This is
Power Management in Note book
Battery Powered System
■PART NUMBER INFORMATION
ST N 8205A S - TR G
ab c d ef
a : Company name.
b : Channel type.
c : Product Serial number.
d : Package Code
e : Handling Code
f : Lead Plating Code
G : Lead-free product.
This product is Halogen Free
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