| Part Number | STN8205A Datasheet |
|---|---|
| Manufacturer | STANSON |
| Overview | STN8205A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to mi. l 20V/5.0A, RDS(ON) = 21m-ohm (Typ.) @VGS =4.5V l 20V/3.0A, RDS(ON) =27m-ohm @VGS =2.5V l Super high density cell design for extremely low RDS(ON) l Exceptional low on-resistance and maximum DC current capability l TSSOP-8 package design D1 S1 S1 G1 Y: Year Code A: Date Code B: Process Code STANSO. |
STN8205A Datasheet and Specifications PDF
The STN8205A is a 5A Dual N-Channel Enhancement Mode MOSFET.
| Part Number | STN8205A Datasheet |
|---|---|
| Description | 20V N-Channel Enhancement Mode MOSFET |
| Manufacturer | Semtron |
| Overview | 20V N-Channel Enhancement Mode MOSFET â– FEATURE The STN8205A is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. advanced trench tech. The STN8205A is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularl. |