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STN8205AA
Dual N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
STN8205AA is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSSOP-8
D2 S2 S2 G2 87 6 5
STN8205AA SYA
FEATURE
z 20V/6.0A, R =DS(ON) 30m-ohm@VGS =4.5V z 20V/5.0A, RDS(ON) =42m-ohm@VGS =2.