Stanson STN8205AA
STN8205AA is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.| Part No. | STN8205AA |
|---|---|
| Datasheet | STN8205AA Download |
| Manufacturer |  Stanson |
| Description | Dual N Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
PIN CONFIGURATION TSSOP-8 D2 S2 S2 G2 87 6 5 STN8205AA SYA FEATURE z 20V/6.0A, R =DS(ON) 30m-ohm@VGS =4.5V z 20V/5.0A, RDS(ON) =42m-ohm@VGS =2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional low on-resistance and maximum DC current capability z TSSOP-8 package design 1 23 4 D1 S1 S1 G1 S Subcontractor Y: Year A: Week Code ORDERING INFORMATION Part Number Package Part Marking STN8205AAST8RG TSSOP-8 SYA Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ST8205AAST8RG ST8 : TSSOP-8; R
