STN8205D
Description
STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
Key Features
- z 20V/4.0A, R =DS(ON) 30m-ohm@VGS =4.5V z 20V/3.4A, RDS(ON) =42m-ohm@VGS =2.5V z Super high density cell design for extremely
