Stanson STN8205D
STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.| Part No. | STN8205D |
|---|---|
| Datasheet | STN8205D Download |
| Manufacturer |  Stanson |
| Description | Dual N Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
PIN CONFIGURATION TSOP-6 G1 D G2 STN8205 SYA FEATURE z 20V/4.0A, R =DS(ON) 30m-ohm@VGS =4.5V z 20V/3.4A, RDS(ON) =42m-ohm@VGS =2.5V z Super high density cell design for extremely low RDS(ON) z Exceptional low on-resistance and maximum DC current capability z TSOP-6 package design S1 D S2 S：Subcontractor Y: Year A: Week Code ORDERING INFORMATION Part Number Package Part Marking STN8205DST6RG TSOP-6 SYA ※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ ST8205DST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – F
