STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | STN8205D |
|---|---|
| Manufacturer | Stanson |
| File Size | 351.78 KB |
| Description | Dual N Channel Enhancement Mode MOSFET |
| Datasheet |
 STN8205D Datasheet
|
|
|
| Part Number | Description | Manufacturer |
|---|---|---|
| STN8205 | 20V Dual N-Channel Enhancement Mode MOSFET | Semtron |
| STN8205A | 20V N-Channel Enhancement Mode MOSFET | Semtron |
| STN826 | PNP MEDIUM POWER TRANSISTORS | STMicroelectronics |
| STN80T08 | 80A N-Channel Enhancement Mode MOSFET | Stanson Technology |
| STN817 | PNP MEDIUM POWER TRANSISTORS | ST Microelectronics |
| Part Number | Description |
|---|---|
| STN8205A | 5A Dual N-Channel Enhancement Mode MOSFET |
| STN8205AA | Dual N Channel Enhancement Mode MOSFET |
| STN210D | N-Channel Enhancement Mode MOSFET |
| STN2610D | N-Channel Enhancement Mode MOSFET |
| STN4260 | 18A N-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
