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3DG102 - NPN Silicon High Frequency Low Power Transistor

This page provides the datasheet information for the 3DG102, a member of the 3DG100 NPN Silicon High Frequency Low Power Transistor family.

Datasheet Summary

Features

  • 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611.

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Datasheet preview – 3DG102

Datasheet Details

Part number 3DG102
Manufacturer Shaanxi Qunli
File Size 30.97 KB
Description NPN Silicon High Frequency Low Power Transistor
Datasheet download datasheet 3DG102 Datasheet
Additional preview pages of the 3DG102 datasheet.

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Full PDF Text Transcription

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG100, 3DG102 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Specifications Parameter name Total Dissipation Max.
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