3DG130
Features
: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name
Symbols Unit
Total Dissipation
Ptot m W
Max. Collector Current ICM m A
Junction Temperature
Tjm °C
Storage Temperature
Tstg °C
C-B Breakdown Voltage V(BR)CBO V
C-E Breakdown Voltage V(BR)CEO V
E-B Breakdown Voltage V(BR)EBO V
Collector- Emitter
VCE(sat)
Saturation Voltage Drop
Base- Emitter Saturation
VBE(sat)
Voltage Drop
C-B Leakage Current
ICBO u A
C-E Leakage Current
ICEO u A
E-B Leakage Current
IEBO u A
DC Current Gain h FE
40 30
Specifications BC
700 300 175 -55~+175
60 40 45 30
0.5 1.0 0.5 25~270
Transition frequency f T MHz...
