3DG130 - NPN Silicon High Frequency Middle Power Transistor

Key Features

1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611.

3DG130 npn silicon high frequency middle power transistor by Shaanxi Qunli - Datasheet Preview

Datasheet Details

Part number	3DG130
Manufacturer	Shaanxi Qunli
File Size	21.10 KB
Description	NPN Silicon High Frequency Middle Power Transistor
Datasheet	3DG130 Datasheet

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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG130 NPN Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Symbols Unit Total Dissipation Ptot mW Max.