GL4800 diode equivalent, thin type infrared emitting diode.
1. Thin type ( Thickness : 1.5mm ) 2. Beam angle ( ∆θ : TYP. ± 30˚ ) 3. Radiant flux ( Φ e : MIN. 0.7mW at I F = 20mA ) 4. Epoxy resin package
Thin Type Infrared Emittin.
1. Floppy disk drives 2. Optoelectronic switches
MIN.0.5
17.5 ± 0.5
2 - 0.9
1.8
2 - 0.45
0.8
1
2 1 Anode 2 Catho.
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