GL483Q diode equivalent, infrared emitting diode.
1. Narrow beam angle (∆θ : TYP. ± 13˚ ) 2. Radiant flux ( Φ e : MIN. 0.7mW at I F = 20mA ) 3. Compact, high reliability by chip coating ( GL480Q/GL483Q ) 4. Long lead typ.
2.95 ± 0.2 2.15 ± 0.2
1
1. Copiers 2. Floppy disk drives 3. Optoelectronic switches
2.54 1.6
2- 0.4
1 Cathode 2 Ano.
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